* Low Intrinsic Gate Resistance
* Low Package Inductance
* Fast Intrinsic Rectifier
* Low R and Q DS(on) G Advantages
* High Power Density
* Easy to Mount
* Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA V
IXFB82N60Q3 Datasheet (658.31 KB)
IXFB82N60Q3
IXYS Corporation
658.31 KB
Power mosfet.
Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFB82N60Q3 D G S VDSS = ID25 = RDS(on) trr 600V 82A 7.
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