IXFB82N60Q3 mosfet equivalent, power mosfet.
Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
Advantages High Power Density Easy to Mount Space Savings
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Appli.
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Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS .
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