IXFC13N50 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell
- Part: IXFC13N50
- Description: HiPerFET MOSFET ISOPLUS220
- Manufacturer: IXYS
- Size: 523.23 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFC12N80P | PolarHV HiPerFET Power MOSFET ISOPLUS220 |
| IXFC14N60P | PolarHV HiPerFET Power MOSFET |
| IXFC14N80P | PolarHV HiPerFET Power MOSFET |
| IXFC15N80Q | N-Channel MOSFET |
| IXFC16N80P | PolarHV HiPerFET Power MOSFET |