IXFC13N50 isoplus220 equivalent, hiperfet mosfet isoplus220.
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D = Drain
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Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitan.
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Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ± 1.
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