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IXFC14N60P - PolarHV HiPerFET Power MOSFET

Features

  • UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Avanlache rated Fast intrinsic diode Advantages Easy to mount Space savings High power density.

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Datasheet Details

Part number IXFC14N60P
Manufacturer IXYS
File Size 162.72 KB
Description PolarHV HiPerFET Power MOSFET
Datasheet download datasheet IXFC14N60P Datasheet
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PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFC14N60P VDSS ID25 RDS(on) trr = = ≤ ≤ 600V 8A 630mΩ 200ns ISOPLUS 220TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force t = 1min t = 1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ±30 ±40 8 42 14 900 10 125 -55 ... +150 150 -55 ... +150 300 260 2500 3000 11..66 / 2.5..14.6 2 V V V V A A A mJ V/ns W °C °C °C °C °C V~ V~ N/lb.
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