IXFC15N80Q - N-Channel MOSFET

IXYS (now Littelfuse)

Key Features

Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

IXFC15N80Q n-channel mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFC15N80Q
Manufacturer	IXYS (now Littelfuse)
File Size	537.88 KB
Description	N-Channel MOSFET
Datasheet	IXFC15N80Q Datasheet

Full PDF Text Transcription for IXFC15N80Q (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFC15N80Q. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ...

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urface N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS(on) = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns ISOPLUS220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min leads to tab mounting force with clip Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 230 -40 ... +150 150 -40 ... +150 300 2500 11...65 / 2.5...

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