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IXFC16N80P - PolarHV HiPerFET Power MOSFET

Key Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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Full PDF Text Transcription for IXFC16N80P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFC16N80P. For precise diagrams, and layout, please refer to the original PDF.

Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 16N80P VDSS ID25 RDS(on) trr = 800 V = 9 A ≤ 650 mΩ ≤...

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ck Surface) IXFC 16N80P VDSS ID25 RDS(on) trr = 800 V = 9 A ≤ 650 mΩ ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 5 Ω TC = 25° C Maximum Ratings 800 800 ± 30 ± 40 9 48

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