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PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C
IXFC 14N80P
(Electrically Isolated Tab)
VDSS = 800 V = 8 A ID25 RDS(on) ≤ 770 mΩ ≤ 250 ns trr
Maximum Ratings 800 800 ±30 ±40 8 40 7 30 1.2 10 130 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g
ISOPLUS220TM (IXFC) E153432
G D S (Isolated Tab)
TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C
G = Gate S = Source
D = Drain
1.6 mm (0.062 in.
IXFC14N80P Datasheet
