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IXFC14N80P - PolarHV HiPerFET Power MOSFET

Key Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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Full PDF Text Transcription for IXFC14N80P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFC14N80P. For precise diagrams, and layout, please refer to the original PDF.

PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ T...

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sic Diode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C IXFC 14N80P (Electrically Isolated Tab) VDSS = 800 V = 8 A ID25 RDS(on) ≤ 770 mΩ ≤ 250 ns trr Maximum Ratings 800 800 ±30 ±40 8 40 7 30 1.2 10 130 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g ISOPLUS220TM (IXFC) E153432 G D S (Isolated Tab) TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C G = Gate S = Source D =

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