IXFC15N80Q Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) z Rugged polysilicon gate cell structure
- Part: IXFC15N80Q
- Description: N-Channel MOSFET
- Manufacturer: IXYS
- Size: 537.88 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFC12N80P | PolarHV HiPerFET Power MOSFET ISOPLUS220 |
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