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IXFC20N80P Datasheet PolarHV HiPerFET Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXFC20N80P datasheet PDF. This datasheet also includes the IXFR20N80P variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXFR20N80P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

PolarHVTM HiPerFET Power MOSFET IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net VDSS = 800 V ID25 = 10 A RDS(on) ≤ 500 mΩ ≤ 250 ns trr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 11 60 10 30 1.0 10 166 -55 ...

+150 150 -55 ...

+150 V V V V G D ISOPLUS220TM (IXFC) E153432 A A A mJ J V/ns W °C °C °C °C V~ N/lb N/lb g g S Isolated back surface ISOPLUS247TM (IXFR) E153432 Isolated back surface G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab Mounting Force ISOPLUS220 ISOPLUS247 (IXFC) (IXFR) 300 2500 11..65 / 2.5..15 20..120 / 4.5..

Key Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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