* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFC30N60P Datasheet (92.78 KB)
IXFC30N60P
IXYS Corporation
92.78 KB
Polar mosfets.
Advanced Technical Information PolarHVTM HiPerFET Power MOSFET www.datasheet4u.com IXFC 30N60P VDSS ID25 RDS(on) Electrically Isolated Back Surfac.
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