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Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT TJ = 125°C
Characteristic Values Min. Typ. Max. 500 2.5 5.0 ± 100 25 250 190 V V nA μA μA mΩ
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Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolat.
Full PDF Text Transcription for IXFC36N50P (Reference)
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IXFC36N50P. For precise diagrams, and layout, please refer to the original PDF.
Advance Technical Information PolarHVTM HiPerFET Power MOSFET www.datasheet4u.com IXFC 36N50P IXFR 36N50P VDSS ID25 (Electrically Isolated Back Surface) N-Channel Enhance...
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6N50P VDSS ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = RDS(on) ≤ ≤ trr 500 18 190 250 V A mΩ ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 18 100 24 50 1.5 20 156 -55 ... +150 150 -55 ...
IXFC36N50P Datasheet
