IXFC30N60P Datasheet | IXYS

Advanced Technical Information Polar HVTM Hi Per FET Power MOSFET .. IXFC 30N60P VDSS ID25 RDS(on) Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab Mounting Force ISOPLUS220 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 17 80 30 50 1.5 10 180 -55 ... +150 150 -55 ... +150 300 2500 11..65/2.5..15 2 V V V V A A A m J J V/ns W °C °C °C °C V~ N/lb g = 600 V = 17 A ≤ 250 mΩ ISOPLUS220TM (IXFC) E153432 G D S Isolated back surface- D = Drain G = Gate S = Source Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30p F) Applications z DC-DC converters z z z z Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.5 5.0 ±100 25 250 250 V V n A µA µA mΩ Advantages z Easy assembly z z Space savings High power density VGS = 10 V, ID = 15 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99341(02/05) IXFC 30N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 15 25 4000 430 42 29 VGS = 10 V, VDS = VDSS , ID = 15 A RG = 4 Ω (External) 20 80 25 145 VGS = 10 V, VDS = 0.5 VDSS, ID = 15 A 30 75 S p F p F p F ns ns ns ns n C n C n C 0.69 K/W 0.21 K/W ISOPLUS220...