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Advanced Technical Information
PolarHVTM HiPerFET Power MOSFET
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IXFC 30N60P
VDSS ID25
RDS(on)
Electrically Isolated Back Surface
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab Mounting Force ISOPLUS220 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 17 80 30 50 1.5 10 180 -55 ... +150 150 -55 ... +150 300 2500 11..65/2.5..
IXFC30N60P Datasheet
