IXFC30N60P - Polar MOSFETs

IXYS (now Littelfuse)

Key Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

IXFC30N60P polar mosfets by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFC30N60P
Manufacturer	IXYS (now Littelfuse)
File Size	92.78 KB
Description	Polar MOSFETs
Datasheet	IXFC30N60P Datasheet

Full PDF Text Transcription for IXFC30N60P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFC30N60P. For precise diagrams, and layout, please refer to the original PDF.

Advanced Technical Information PolarHVTM HiPerFET Power MOSFET www.datasheet4u.com IXFC 30N60P VDSS ID25 RDS(on) Electrically Isolated Back Surface N-Channel Enhancement ...

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ID25 RDS(on) Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab Mounting Force ISOPLUS220 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 17 80 30 50 1.5 10 180 -55 ... +150 150 -55 ... +150 30

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