IXFC30N60P Datasheet | IXYS

Polar HVTM Hi Per FET Power MOSFET IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL ..net VDSS = 600 V ID25 = 15 A RDS(on) ≤ 250 mΩ ≤ 250 ns trr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 15 80 30 50 1.5 10 166 -55 ... +150 150 -55 ... +150 V V V V ISOPLUS220TM (IXFC) E153432 A A A m J J V/ns W °C °C °C °C V~ N/lb N/lb g g Isolated back surface ISOPLUS247TM (IXFR) E153432 Isolated back surface G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab Mounting Force ISOPLUS220 ISOPLUS247 (IXFC) (IXFR) 300 2500 11..65 / 2.5..15 20..120 / 4.5..25 2 5 VISOL FC Weight Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30p F) Applications z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 m A VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 500 250 V V n A μA μA mΩ Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages z Easy assembly z z VGS = 10 V, ID = 15 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Space savings High power density DS99341E(03/06) © 2006 IXYS All rights...