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IXFC30N60P - PolarHV HiPerFET Power MOSFET

This page provides the datasheet information for the IXFC30N60P, a member of the IXFR30N60P PolarHV HiPerFET Power MOSFET family.

Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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Datasheet preview – IXFC30N60P

Datasheet Details

Part number IXFC30N60P
Manufacturer IXYS (now Littelfuse)
File Size 154.91 KB
Description PolarHV HiPerFET Power MOSFET
Datasheet download datasheet IXFC30N60P Datasheet
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Full PDF Text Transcription

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PolarHVTM HiPerFET Power MOSFET IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net VDSS = 600 V ID25 = 15 A RDS(on) ≤ 250 mΩ ≤ 250 ns trr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 15 80 30 50 1.5 10 166 -55 ... +150 150 -55 ...
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