IXFC60N20 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) l Rugged polysilicon gate cell structure
- Part: IXFC60N20
- Description: HiPerFET MOSFET ISOPLUS220TM
- Manufacturer: IXYS
- Size: 100.10 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFC12N80P | PolarHV HiPerFET Power MOSFET ISOPLUS220 |
| IXFC13N50 | HiPerFET MOSFET ISOPLUS220 |
| IXFC14N60P | PolarHV HiPerFET Power MOSFET |
| IXFC14N80P | PolarHV HiPerFET Power MOSFET |
| IXFC15N80Q | N-Channel MOSFET |