IXFC80N10 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Uncla
- Part: IXFC80N10
- Description: HiPerFETTM MOSFET ISOPLUS220
- Manufacturer: IXYS
- Size: 98.68 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFC80N08 | (IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM |
| IXFC80N085 | (IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM |
| IXFC12N80P | PolarHV HiPerFET Power MOSFET ISOPLUS220 |
| IXFC13N50 | HiPerFET MOSFET ISOPLUS220 |
| IXFC14N60P | PolarHV HiPerFET Power MOSFET |