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IXFH16N50P - Polar MOSFET

Download the IXFH16N50P datasheet PDF. This datasheet also covers the IXFP16N50P variant, as both devices belong to the same polar mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 400 m Ω Advantages z z z Easy to mount Space savings High power density DS99357A(03/05) © 2005 IXYS All rights reserved IXFH 16N50P IXFA 16N50P IXFP 16N50P Symbol Test Conditions www. DataSheet4U. com Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 8 16 2250 VGS.

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Note: The manufacturer provides a single datasheet file (IXFP16N50P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH16N120P Power MOSFET
IXFH16N80P Power MOSFET
IXFH160N15T Power MOSFET
IXFH102N15T Power MOSFET
IXFH10N100 Power MOSFET

Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS(on) trr = 500 V = 16 A = 400 mΩ = 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ±30 ± 40 16 35 16 25 750 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-220 (IXTP) G D S (TAB) TO-263 (IXTA) G S (TAB) TO-247 (IXFH) 1.6 mm (0.062 in.
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