IXFH68N20, IXFH74N20 Datasheet - IXYS Corporation

IXFH68N20 Power MOSFET

www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) IXFH/IXFT 68N20 IXFH/IXFT 74N20 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, .

IXFH68N20 Features

* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low rated package inductance - easy to drive and to protect Fast intrinsic Rectifier 1.6 mm (0.062 in.) from case for 10 s Mount

IXFH74N20_IXYSCorporation.pdf

IXFH68N20 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFH68N20, IXFH74N20. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFH68N20, IXFH74N20

Manufacturer:

IXYS Corporation

File Size:

188.96 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFH68N20, IXFH74N20.
Please refer to the document for exact specifications by model.

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TAGS

IXFH68N20 IXFH74N20 Power MOSFET IXYS Corporation

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