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Advanced Technical Information
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 20N120
VDSS ID25
D
= 1200 V = 20 A RDS(on) = 0.75 Ω ≤ 300 ns trr
G S
S
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ≤ 150°C, RG = 2 Ω TC= 25°C
Maximum Ratings 1200 1200 ± 30 ± 40 20 80 10 40 2 5 780 -55 ... +150 150 -55 ...
IXFN20N120 Datasheet
