* International standard package
* miniBLOC, with Aluminium nitride isolation 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated Md Moun
IXFN20N120 Datasheet (587.98 KB)
IXFN20N120
IXYS Corporation
587.98 KB
Hiperfet power mosfets.
Advanced Technical Information HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 20N120 VDSS ID25 D =.
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