Datasheet Summary
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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4.7 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C
IXFA 3N120 IXFP 3N120
VDSS =1200 V = 3A ID25 RDS(on) = 4.5 Ω trr ≤ 300 ns
Maximum Ratings 1200 1200 ±20 ±30 3 12 3 20 700 10 200 -55 to +150 150 -55 to +150 300 V V V V A A A mJ mJ V/ns W °C °C °C °C
TO-220 (IXFP)
D (TAB)
G DS
TC =...