Overview: .. HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary data sheet IXFA 3N80 IXFP 3N80 VDSS = 800 V ID25 = 3.6 A RDS(on) = 3.6 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 3.6 14.4 3.6 10 400 5 100 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C TO-220 (IXFP) D (TAB)
G DS TO-263 (IXFA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.