IXFP3N120 Description
.. HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220).
IXFP3N120 Key Features
- easier to drive
- faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding
- VDSS, ID = 0.5
- VDSS, ID = 0.5
- ID25 9 22 0.62 (TO-220) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
- Gate 3
- Source 2
- Drain 4
- Drain Bottom Side
- ID25, pulse test