IXFP3N120
IXFP3N120 is HiPerFET Power MOSFETs manufactured by IXYS.
- Part of the IXFA3N120 comparator family.
- Part of the IXFA3N120 comparator family.
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Hi Per FETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4.7 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C
IXFA 3N120 IXFP 3N120
VDSS =1200 V = 3A ID25 RDS(on) = 4.5 Ω trr ≤ 300 ns
Maximum Ratings 1200 1200 ±20 ±30 3 12 3 20 700 10 200 -55 to +150 150 -55 to +150 300 V V V V A A A m J m J V/ns W °C °C °C °C
TO-220 (IXFP)
D (TAB)
G DS
TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
TO-263 (IXFA)
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features z
1.13/10 Nm/lb.in. 4 2 g g z z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ±100 TJ = 25°C TJ = 125°C 50 2 4.5 V V n A µA m A Ω z
Low gate charge and capacitances
- easier to drive
- faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 m A VDS = VGS, ID = 1.5 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Advantages z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
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