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Preliminary Technical Information
PolarHVTM HiPerFET Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFP 3N50PM
VDSS ID25 RDS(on) trr
= = ≤ ≤
500 2.7 2.0 200
V A Ω ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD
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Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 50 Ω TC = 25° C
Maximum Ratings 500 500 ± 30 ± 40 2.7 8 3 10 100 10 36 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C
OVERMOLDED TO-220 (IXTP...
IXFP3N50PM Datasheet
