Datasheet4U Logo Datasheet4U.com

IXFP3N80 - Power MOSFET

Download the IXFP3N80 datasheet PDF. This datasheet also covers the IXFA3N80 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • l l l 1.13/10 Nm/lb. in. 4 2 g g International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 50 1 3.6 V V nA mA mA W Advantages l l l Easy to mount Space savings High power density VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFA3N80_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFP30N60X Power MOSFET IXYS
IXFP30N60X N-Channel MOSFET INCHANGE
IXFP34N65X2 Power MOSFET IXYS
IXFP34N65X2 N-Channel MOSFET INCHANGE
IXFP34N65X2M N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFP3N120 HiPerFET Power MOSFETs
IXFP3N50PM Power MOSFET
IXFP05N100M High Voltage HiperFET
IXFP102N15T Power MOSFET
IXFP10N60P Polar MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N80 VDSS = 800 V ID25 = 3.6 A RDS(on) = 3.6 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 3.6 14.4 3.6 10 400 5 100 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C TO-220 (IXFP) D (TAB) G DS TO-263 (IXFA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.
Published: |