IXFR200N10P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low drain to tab capacitance(<30pF)
- Part: IXFR200N10P
- Manufacturer: IXYS (official site)
- Size: 593.20 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFR20N100P | Polar Power MOSFET HiPerFET |
| IXFR20N120P | Polar Power MOSFET HiPerFET |
| IXFR20N80P | PolarHV HiPerFET Power MOSFET |
| IXFR21N100Q | HiPerFETTM Power MOSFETs |
| IXFR24N100 | HiPerFETTM Power MOSFETs |
IXFR200N10P Description
Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXFR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated .. Symbol Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C;.