IXFR20N120P Key Features
- Silicon chip on Direct-Copper-Bond
- substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell
- Part: IXFR20N120P
- Description: Polar Power MOSFET HiPerFET
- Manufacturer: IXYS
- Size: 130.49 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFR20N100P | Polar Power MOSFET HiPerFET |
| IXFR20N80P | PolarHV HiPerFET Power MOSFET |
| IXFR200N10P | PolarTM HiPerFET Power MOSFET |
| IXFR21N100Q | HiPerFETTM Power MOSFETs |
| IXFR24N100 | HiPerFETTM Power MOSFETs |