IXFR21N100Q Key Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- IXYS advanced low Qg process
- Low gate charge and capacitances
- easier to drive
- faster switching
- Low drain to tab capacitance(<30pF)
- Low RDS (on) HDMOSTM process