IXFR24N50Q Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gat
- Part: IXFR24N50Q
- Manufacturer: IXYS (official site)
- Size: 111.40 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFR24N50 | HiPerFET Power MOSFETs |
| IXFR24N100 | HiPerFETTM Power MOSFETs |
| IXFR200N10P | PolarTM HiPerFET Power MOSFET |
| IXFR20N100P | Polar Power MOSFET HiPerFET |
| IXFR20N120P | Polar Power MOSFET HiPerFET |
IXFR24N50Q Description
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.