* W °C °C °C °C V~ g
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(
IXFR26N50 Datasheet (66.84 KB)
IXFR26N50
IXYS Corporation
66.84 KB
Hiperfet power mosfets.
Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM IXFR 24N50 (Electrically Isolated Back Surface) N-Channel Enhancement.
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