* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* International standard packages
* Low RDS (on)
* Rated for unclamped Inductive load switching (UIS) rated
* Molding epoxies meet UL 94 V-0 flammabi
IXFR27N80Q Datasheet (55.89 KB)
IXFR27N80Q
IXYS Corporation
55.89 KB
Power mosfet.
HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS ID25 RDS(on) = 800 V = 27 A = 300 mW trr £ 250 ns PLUS.
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