IXFR30N110P Key Features
- Silicon chip on Direct-Copper-Bond
- substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<30pF) Rugged polysilicon gate cell structure Unclamped Inductiv
- Part: IXFR30N110P
- Description: Polar Power MOSFET HiPerFET
- Manufacturer: IXYS
- Size: 129.52 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFR30N50Q | Power MOSFET |
| IXFR30N60P | PolarHV HiPerFET Power MOSFET |
| IXFR32N50Q | Power MOSFET |
| IXFR34N80 | Power MOSFET |
| IXFR36N50P | Polar MOSFETs |