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IXFR30N110P Datasheet Polar Power MOSFET HiPerFET

Manufacturer: IXYS (now Littelfuse)

Overview

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC www.DataSheet4U.net IXFR30N110P VDSS ID25 RDS(on) trr = = ≤ ≤ 1100V 16A 400mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1100 1100 ± 30 ± 40 16 75 15 1.5 15 320 -55 ...

+150 150 -55 ...

+150 V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb.

Key Features

  • Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5.
  • substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(.