IXFR30N60P - PolarHV HiPerFET Power MOSFET

IXYS (now Littelfuse)

Key Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

IXFR30N60P polarhv hiperfet power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFR30N60P
Manufacturer	IXYS (now Littelfuse)
File Size	154.91 KB
Description	PolarHV HiPerFET Power MOSFET
Datasheet	IXFR30N60P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PolarHVTM HiPerFET Power MOSFET IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net VDSS = 600 V ID25 = 15 A RDS(on) ≤ 250 mΩ ≤ 250 ns trr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 15 80 30 50 1.5 10 166 -55 ... +150 150 -55 ...