IXFR30N110P
IXFR30N110P is Polar Power MOSFET HiPerFET manufactured by IXYS.
Polar TM Power MOSFET Hi Per FETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS d V/dt PD TJ TJM Tstg TL TSOLD VISOL FC
..net
VDSS ID25
RDS(on) trr
= = ≤ ≤
1100V 16A 400mΩ 300ns
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1100 1100 ± 30 ± 40 16 75 15 1.5 15 320 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb. g
ISOPLUS247 (IXFR) E153432
Isolated Tab
G = Gate S = Source
D = Drain
Features
- Silicon chip on Direct-Copper-Bond
Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force
300 260 2500 20..120/4.5..27 5
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- substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<30p F) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier
Weight
Advantages Easy assembly Space savings High power density
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3m A VDS = VGS, ID = 1m A VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 15A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 1100 3.5 6.5 ± 200 V V n A
Applications: z z...
