Datasheet4U Logo Datasheet4U.com

IXFR30N110P - Polar Power MOSFET HiPerFET

Key Features

  • Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5.
  • substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFR32N100Q3 Power MOSFET IXYS
IXFR32N80Q3 Power MOSFET IXYS
IXFR36N60P Power MOSFET IXYS
IXFR102N30P Polar HiPerFET Power MOSFET IXYS
IXFR120N25P PolarHT HiPerFET Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFR30N50Q Power MOSFET
IXFR30N60P PolarHV HiPerFET Power MOSFET
IXFR32N50Q Power MOSFET
IXFR34N80 Power MOSFET
IXFR36N50P Polar MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC www.DataSheet4U.net IXFR30N110P VDSS ID25 RDS(on) trr = = ≤ ≤ 1100V 16A 400mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1100 1100 ± 30 ± 40 16 75 15 1.5 15 320 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb.