IXFR30N50Q
IXFR30N50Q is Power MOSFET manufactured by IXYS.
Hi Per FETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High d V/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
VDSS IXFR 30N50Q IXFR 32N50Q
ID25
RDS(on) 0.16 W 0.15 W
500 V 29 A 500 V 30 A trr £ 250 ns
Maximum Ratings 500 500 ±20 ±30 30N50 32N50 30N50 32N50 30N50 32N50 30 120 30 1.5 45 5 310 -55 ... +150 150 -55 ... +150 300 2500 6 V V V V A A A J m J V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E 153432
Isolated back surface- G = Gate S = Source
- Patent pending D = Drain
Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<50p F)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 30N50 32N50 100 1 0.16 0.15 V V n A m A m A W W Advantages
- Easy assembly
- Space savings
- High power density
98608B (7/00)
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1m A VDS = VGS, ID = 4m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1,...
