IXFR34N80 Description
+150 300 2500 5 V V V V A A A mJ J V/ns ISOPLUS 247TM E153432 G D S Isolated backside G = Gate S = Source D = Drain Patent pending.
IXFR34N80 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<25pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell