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IXFR36N50P - Polar MOSFETs

Download the IXFR36N50P datasheet PDF. This datasheet also covers the IXFC36N50P variant, as both devices belong to the same polar mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International standard isolated packages z UL recognized packages z Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT TJ = 125°C Characteristic Values Min. Typ. Max. 500 2.5 5.0 ± 100 25 250 190 V V nA μA μA mΩ z z z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFC36N50P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFR36N60P Power MOSFET IXYS
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IXFR102N30P Polar HiPerFET Power MOSFET IXYS
IXFR120N25P PolarHT HiPerFET Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFR30N110P Polar Power MOSFET HiPerFET
IXFR30N50Q Power MOSFET
IXFR30N60P PolarHV HiPerFET Power MOSFET
IXFR32N50Q Power MOSFET
IXFR34N80 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information PolarHVTM HiPerFET Power MOSFET www.datasheet4u.com IXFC 36N50P IXFR 36N50P VDSS ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = RDS(on) ≤ ≤ trr 500 18 190 250 V A mΩ ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 18 100 24 50 1.5 20 156 -55 ... +150 150 -55 ...