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HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
VDSS IXFR 30N50Q IXFR 32N50Q
ID25
RDS(on) 0.16 W 0.15 W
500 V 29 A 500 V 30 A trr £ 250 ns
Maximum Ratings 500 500 ±20 ±30 30N50 32N50 30N50 32N50 30N50 32N50 30 120 30 1.5 45 5 310 -55 ... +150 150 -55 ...
IXFR32N50Q Datasheet
