* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFR30N60P Datasheet (154.91 KB)
IXFR30N60P
IXYS Corporation
154.91 KB
Polarhv hiperfet power mosfet.
PolarHVTM HiPerFET Power MOSFET IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche .
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