* W °C °C °C °C V~ g l l l l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(
IXFR34N80 Datasheet (89.42 KB)
IXFR34N80
IXYS Corporation
89.42 KB
Power mosfet.
www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die Avalanche Rated Preliminary Data Sheet S.
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