IXFR34N80 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<25pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell
- Part: IXFR34N80
- Description: Power MOSFET
- Manufacturer: IXYS
- Size: 89.42 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFR30N110P | Polar Power MOSFET HiPerFET |
| IXFR30N50Q | Power MOSFET |
| IXFR30N60P | PolarHV HiPerFET Power MOSFET |
| IXFR32N50Q | Power MOSFET |
| IXFR36N50P | Polar MOSFETs |