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IXKC40N60C - CoolMOS Power MOSFET

Features

  • l 1.6 mm (0.062 in. ) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 65 / 2.4 11 N/lb 3 g l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation 2ND generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) Low thermal resistance due to reduced chip thickness Low drain to tab capacitance(.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), High Voltage,, MOSFET IXKC 40N60C VDSS = 600 V ID25 = 28 A RDS(on) = 96 mΩ Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 Package lead current limit Io Io = 10A, TC = 25°C = 20A Maximum Ratings 600 ±20 28 19 45 690 1 250 -55 ... +150 150 -55 ... +125 V V A A A mJ mJ W °C °C °C °C V~ ISOPLUS 220TM G D S Isolated back surface* G = Gate, S = Source * Patent pending D = Drain, TC = 25°C Features l 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 ... 65 / 2.
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