Datasheet Summary
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ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), High Voltage,, MOSFET
IXKC 40N60C
VDSS = 600 V ID25 = 28 A RDS(on) = 96 mΩ
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR PD TJ TJM Tstg TL VISOL FC Weight
Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 Package lead current limit Io Io = 10A, TC = 25°C = 20A
Maximum Ratings 600 ±20 28 19 45 690 1 250 -55 ... +150 150 -55 ... +125 V V A A A mJ mJ W °C °C °C °C V~
ISOPLUS 220TM
G D S Isolated back surface- G = Gate, S = Source
- Patent pending D = Drain,
TC = 25°C
Features l
1.6 mm (0.062 in.)...