* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(
IXUC200N055 Datasheet (53.94 KB)
IXUC200N055
IXYS Corporation
53.94 KB
Trench power mosfet isoplus220.
ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC200N055 VDSS = 55 V ID25 = 200 A RDS(on) = 5.
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