* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Trench MOSFET - very fast lsowwitcRhDiSn(ogn) - usable intrinsic reverse diode z Low drain to tab capacitance(
IXUC160N075 Datasheet (506.20 KB)
IXUC160N075
IXYS Corporation
506.20 KB
Trench power mosfet.
ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 ISOPLUS220TM Electrically Isolated Back Surface VDSS = ID25 = RDS(on) = 75 V 160 A 6.
📁 Related Datasheet
IXUC160N075 N-Channel MOSFET (INCHANGE)
IXUC100N055 55V Trench Power MOSFET (IXYS Corporation)
IXUC120N10 Trench Power MOSFET ISOPLUS220 (IXYS Corporation)
IXUC200N055 Trench Power MOSFET ISOPLUS220 (IXYS Corporation)
IXUC60N10 Power MOSFET (IXYS)
IX0640CE IX0640CE (ETC)
IX150T06M-AG XPT IGBT (IXYS)
IX1779CE IX1779CE Circuit (ETC)
IX2113 600V High and Low Side Gate Driver (IXYS)
IX2120 1200V High and Low Side Gate Driver (IXYS)
