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IXZ4DF12N100 - RF Power MOSFET&DRIVER

Description

The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications.

Features

  • Isolated Substrate.
  • high isolation voltage (>2500V).
  • excellent thermal transfer.
  • Increased temperature and power cycling capability.
  • IXYS advanced Z-MOS process.
  • Low RDS(on).
  • Very low insertion inductance (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low RDS(on) • Very low insertion inductance (<2nH) • No beryllium oxide (BeO) or other hazardous materials • Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes • Latch-Up Protected • Low Quiescent Supply Current Advantages • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density • Single package reduces size and heat sink area 1000 Volts 12 A 0.
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