IXZ4DF18N50 Overview
The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET bination specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications. The IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of less than 4ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire...
IXZ4DF18N50 Key Features
- Isolated substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power cycling capability
- IXYS advanced Z-MOS process
- Low Rds(ON)
- Very low insertion inductance(<2nH)
- No beryllium oxide (BeO) or other hazardous materials
- Built using the advantages and patibility of CMOS and IXYS HDMOS™ processes
- Latch-up protected
IXZ4DF18N50 Applications
- Optimized for RF and high speed
- Easy to mount-no insulators needed