IXZ4DF12N100 Overview
The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET bination specifically designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications. The IXZ4DF12N100 in pulse mode can provide 72A of peak current while producing voltage rise and fall times of less than 5ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire...
IXZ4DF12N100 Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power cycling capability
- IXYS advanced Z-MOS process
- Low RDS(on)
- Very low insertion inductance (<2nH)
- No beryllium oxide (BeO) or other hazardous materials
- Built using the advantages and patibility of CMOS and IXYS HDMOS™ processes
- Latch-Up Protected