Datasheet Summary
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RF Power MOSFET & DRIVER
Driver / MOSFET bination DEIC-515 Driver bined with IXZ318N50 MOSFET Gate driver matched to MOSFET
Features
- Isolated substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power cycling capability
- IXYS advanced Z-MOS process
- Low Rds(ON)
- Very low insertion inductance(<2nH)
- No beryllium oxide (BeO) or other hazardous materials
- Built using the advantages and patibility of CMOS and IXYS HDMOS™ processes
- Latch-up protected
- Low quiescent supply current Applications Advantages
- Optimized for RF and high speed
- Easy to mount- no insulators needed
- High power density
-...