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Inchange Semiconductor

2SB1152 Datasheet Preview

2SB1152 Datasheet

Silicon PNP Power Transistors

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1152
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-12 A
ICP Collector Current-Pulse
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
-20 A
120
W
3
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SB1152 Datasheet Preview

2SB1152 Datasheet

Silicon PNP Power Transistors

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1152
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A
-2.0 V
VBE(on) Base -Emitter On Voltage
IC= -8A; VCE= -5V
-1.8 V
ICBO Collector Cutoff Current
VCB= -160V ; IE=0
-50 μA
IEBO Emitter Cutoff Current
VEB= -3V; IC=0
-50 μA
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
20
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
60 200
hFE-3
DC Current Gain
IC= -8A; VCE= -5V
20
COB Output Capacitance
IE= 0; VCB= -10V; ftest= 1.0MHz
420
pF
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
20 MHz
hFE-2Classifications
QS
P
60-120 80-160 100-200
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SB1152
Description Silicon PNP Power Transistors
Maker Inchange Semiconductor
Total Page 2 Pages
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