Datasheet Details
| Part number | 2SB1182 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 238.38 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB1182 Download (PDF) |
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| Part number | 2SB1182 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 238.38 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB1182 Download (PDF) |
|
|
|
·Small and slim package ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 1.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
IB= -200mA V(BR)CBO Collector-Base Breakdown Voltage IC= -50uA;
IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1182 | Medium power Transistor | Rohm |
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2SB1182 | Medium Power Transistor | Kexin |
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2SB1182 | PNP PLASTIC ENCAPSULATE TRANSISTORS | Weitron |
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2SB1182 | PNP TRANSISTOR | UTC |
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2SB1182 | Medium Power Transistor | GME |
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