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2SC3122 - Silicon NPN RF Transistor

Description

High Gain: Gpe= 24dB TYP.

Low Noise: NF= 2.0dB TYP.

Designed for TV VHF RF amplifier applications.

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INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3122 DESCRIPTION ·High Gain: Gpe= 24dB TYP. @ f= 200MHz ·Low Noise: NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 20 mA IB B Base Current-Continuous 10 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.
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