2SC3122 Overview
@ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 30 V ICBO Collector Cutoff Current VCB= 25V;.
| Part number | 2SC3122 |
|---|---|
| Datasheet | 2SC3122_InchangeSemiconductor.pdf |
| File Size | 188.52 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
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@ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 30 V ICBO Collector Cutoff Current VCB= 25V;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SC3122 | Silicon NPN Transistor | Toshiba Semiconductor | |
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2SC3122 | Silicon NPN Epitaxial Transistor | Kexin |