2SC3127 Overview
·Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.
| Part number | 2SC3127 |
|---|---|
| Datasheet | 2SC3127_InchangeSemiconductor.pdf |
| File Size | 222.96 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
|
|
|
·Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SC3127 | Silicon NPN Transistor | Hitachi Semiconductor | |
![]() |
2SC3127 | Silicon NPN Epitaxial Transistor | Renesas |