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2SC3127 - Silicon NPN RF Transistor

Description

Low Noise and High Gain NF = 2.2 dB TYP.

@VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP.

Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.

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INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3127 DESCRIPTION ·Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.
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