Datasheet Details
| Part number | 2SC3566 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.04 KB |
| Description | Power Transistor |
| Download | 2SC3566 Download (PDF) |
|
|
| Part number | 2SC3566 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.04 KB |
| Description | Power Transistor |
| Download | 2SC3566 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3566 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO VCEX(SUS)-1 VCEX(SUS)-2 VCE(sat) Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage IC= 30mA ;
IB= 0 IC= 3.0A ;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 2SC3561 | N-Channel MOSFET Transistor |
| 2SC3563 | Power Transistor |
| 2SC3565 | Power Transistor |
| 2SC3502 | Silicon NPN Power Transistor |
| 2SC3512 | Silicon NPN RF Transistor |
| 2SC3514 | Silicon NPN Power Transistor |
| 2SC3518-Z | Silicon NPN Power Transistor |
| 2SC3544 | Silicon NPN RF Transistor |
| 2SC3545 | Silicon NPN RF Transistor |
| 2SC3547 | Silicon NPN RF Transistor |