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2SD1157 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

2SD1157 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) *High DC Current Gain- : hFE= 250V(Min.) @IC= 0.5A *Low Collector Saturation Voltage *High Reliability *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Switching regula.

2SD1157 Datasheet (209.25 KB)

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Datasheet Details

Part number:

2SD1157

Manufacturer:

Inchange Semiconductor

File Size:

209.25 KB

Description:

Silicon npn power transistor.

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2SD1157 Silicon NPN Power Transistor Inchange Semiconductor

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